MOSFET 2N/2P-CH 200V 12VDFN TC8220K6-G
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Description:
MOSFET 2N/2P-CH 200V 12VDFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
2 N channelsand 2 P channels
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
TC8220K6-G(FET, MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13452,Price reference "real-time change" China/Hongkong。 TC8220K6-G package/specs, Download TC8220K6-G、Datasheet。